Our LEDs range from red to mid-infrared, a variety of wavelengths enabled by crystal growth and process technology that supports compound semiconductor materials. LEDs are mainly used in combination with photosensors, and offer a lower cost and longer service life compared to laser diodes. High quality and reliability are ensured by strictly controlled assembly and inspection processes.
The C8000-30 employs an ultrahigh-sensitivity back-thinned CCD sensor made by Hamamatsu, which offers extremely high quantum efficiency in a wide range of UV, VIS and NIR wavelengths. The high UV sensitivity from 120 nm is useful for semiconductor mask inspection and measurement applications. Also, the high NIR sensitivity is useful for fluorescence measurement, NIR LD measurement and so on.
The ORCAII has a specialty feature of low noise and high-sensitivity. Cooling down enables dark current as low as 0.0012 electrons/pixel/second and the 1024 ×1024 pixels BT-CCD (Back-thinned CCD) provides 1M pixel resolution and high quantum efficiency of over 90 % peak and broad sensitivity from UV to NIR. This camera is especially suitable for applications which require to detect faint light with long exposure time and low noise.
The C12741-03 is an InGaAs camera with sensitivity in the near infrared region from 950 nm to 1700 nm. It has an analog output (EIA) and a USB 3.0 interface port which supports 14 bit image acquisition and exposure time adjustment. This makes the C12741-03 ideal for use in a wide range of applications including internal inspection of silicon wafers and devices, laser beam alignment and evaluation of solar cells.
The C12741-11 is a near-infrared camera which employs a 640 × 512 pixel InGaAs sensor. -70 ˚C peltier cooling significantly reduces dark current which leads to improved image quality and allows imaging with long exposure time. Unlike CCD or CMOS cameras, the C12741-11 can detect weak IR light with a high signal to noise ratio.
Hamamatsu provides InGaAs image sensor options covering the visible (VIS), near infrared (NIR), and short wavelength infrared (SWIR) regions, and they have a built-in CMOS IC, allowing easy operation. Our InGaAs image sensors fulfill different applications including spectrometers for spectrometry, scientific cameras for microscopy, and machine vision for industrial imaging. Also, we provide driver modules and evaluation boards to decrease your design time. Customizations for InGaAs image sensors and driver modules are available for specific applications and requirements.
The spirit of pursuing the unknown and unexplored - inherited from our predecessors
Hamamatsu Photonics K.K. started as a small firm established in 1953 by Heihachiro Horiuchi who studied under the guidance of Dr. Kenjiro Takayanagi now respectfully called the “father of Japanese television.” Since then, we have inherited the “photoelectric technology” developed by Dr. Takayanagi for converting light into electrical signals as well as “the spirit of pursuing unknown and unexplored realms” which led him to the achievement of displaying the Japanese character “イ” on a cathode-ray tube for the first time in the world. Over the past 65 years, we have been consistently engaged in developing photoelectric devices and their application products while moving forward along with the continuing advances in technologies of light.
Just as electrons and electronics brought immeasurable richness to our lives in the 20th century, the 21th century will be the age of photons (particles of light) and photonics. Spurred by the unlimited possibilities of light, photonics technology is increasingly applied in a wide range of fields. However, the interaction of light with matter is still hardly understood at the present time. By pursuing the ultimate limits of photoelectric conversion technology to approach the true nature of light, Hamamatsu Photonics has been challenging the unknown where no one has yet explored, with the aim of creating new industries by utilizing light and acquiring new knowledges.