A unique device based on silicon light-emitting diodes was developed by the St. Petersburg physicists - specialists of the Ioffe Physico-Technical Institute, Russian Academy of Sciences, and the St. Petersburg State Electrotechnical University.

Emission of far infra-red range of wave-lengths generated by this device will help to cure in an ordinary hospital even such burns that could be previously treated only in specialised burn centers. The Foundation for Assistance to Small Innovative Enterprises (FASIE) will help the researchers to arrange production of devices.

"The fact that the far infrared emission promotes quicker healing of burns can be considered ascertained,” says project manager, Professor Bagrayev, Doctor of Science (Physics&Mathematics). "We have already made sure of that through applying the small-size device developed by us, which proved well in treating arthrosis, wounds, ulcers and bedsore. It has turned out that in case of burns the device helps very efficiently: affected surface heals quicker and hurts less.”

The value of that structure would have been low, if the authors did not invent the way to reinforce emission from these extrasmall light-emitting diodes. The researchers learned to grow a resonator layer on the same plate - silicon microscopical pyramidia, covering all over the formerly smooth crystal boundary, consisting of multitude radiating elements.

Final clinical trials of the new device in the Vishnevsky Scientific Research Institute are scheduled for April this year. The researchers are sure that the device they have developed will be efficient even in cases that seemed hopeless so far- i.e., patients in shock condition, with large area of burns.

MEDICA.de; Source: Informnauka (Informscience) Agency